gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh GFC120 n channel power mosfet chip specification general description: * advanced process technology * dynamic dv/dt rating * 175 operating temperature * fast switching * fully avalanche rated mechanical data: d7 dimension 2.1mm x 2.92mm thickness: 400 ? m metallization : top : : al backside : crniag / au suggested bonding conditions: die mounting: solder perform 95/5 pbsn or 92.5./2.5/5 pbagin source bonding wire : 8 mil al absolute maximum rating @ta=25 characteristics symbol limit unit test conditions drain-to-source breakdown voltage v(br)dss 100 v vgs=0v, id=250 ? static drain-to - source on-resistance rds(on) 0.27 ? vgs=10v, id=5.5 continuous drain current ( in target package) id@25 9.2 a vgs=10v continuous drain current ( in target package) id@100 6.5 a vgs=10v operation junction tj -55~175 storage temperature t str -55~175 target device: irf720 to-220ab p d 60 w @tc=25
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